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 Switching Diodes
MA6S121
Silicon epitaxial planar type
Unit : mm
For switching circuit I Features
* Small S-mini type 6-pin package * Three isolated elements contained in one package, allowing highdensity mounting * Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine * Short reverse recovery time trr * Small terminal capacitance, Ct
2.0 0.1 0.65 0.65
1 2 3
2.1 0.1 1.25 0.1 6 5 4
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 -55 to +150 Unit V V mA mA mA C C
0.7 0.1
1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 S-Mini Type Package (6-pin)
Marking Symbol: M2D Internal Connection
1 2 3 6 5 4
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 2 3 Conditions Min Typ Max 0.1 1.2 Unit A V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
0.2 0.05
1
MA6S121
IF VF
103 105
Switching Diodes
IR V R
1.6 1.4
VF Ta
102
Forward current IF (mA)
Forward voltage VF (V)
100C 10 25C - 20C 1
Reverse current IR (nA)
Ta = 150C
104
Ta = 150C
1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA
103
100C
IF = 100 mA
102 25C 10
10-1
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
1
0
20
40
60
80
100
120
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR Ta
105 VR = 75 V 104
Ct VR
1.2 f = 1 MHz Ta = 25C 1 000 300
IF(surge) tW
Ta = 25C
IF(surge) tW
Terminal capacitance Ct (pF)
35 V 6V
1.0
Forward surge current IF(surge) (A)
Reverse current IR (nA)
100 30 10 3 1 0.3 0.1
Non repetitive
0.8
103
0.6
102
0.4
10
0.2
1 -40
0
40
80
120
160
200
0
0
20
40
60
80
100
120
0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Reverse voltage VR
(V)
Pulse width tW (ms)
2


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